Incorporation of Zn in GaAs during organometallic vapor phase epitaxy growth compared to equilibrium
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Nanometer-scale GaAs clusters from organometallic precursors
We report the synthesis of crystalline nanometer-scale GaAs clusters by homogeneous vapor-phase nucleation from organometallic precursors. Cluster synthesis is performed in a hot wall organometallic vapor-phase epitaxy reactor at atmospheric pressure. High resolution transmission electron microscopy studies reveal that the aerosol produced is composed of highly faceted single crystal GaAs parti...
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Optical properties of GaInP/GaAs:Er,O/GaInP double heterostructure (DH) laser diodes (LDs) grown by organometallic vapor phase epitaxy (OMVPE) were investigated. The Er-doped LDs showed laser emission of the GaAs band-edge. The threshold current density (Jth) was 3.6 kA/cm on the n-type GaAs substrates and 15.8 kA/cm on the p-type at 77 K. The Er-doped LDs on the n-type substrate showed a stron...
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High-quality GaAs/AlGaAs quantum well and modulation-doped heterostructures have been grown by low-pressure organometallic vapor phase epitaxy (OMVPE) using trimethylamine alane (TMAA) as a new aluminum source. TMAA is an alternative to the conventional organometallic precursors and offers the advantage of substantially reduced oxygen and carbon incorporation in AlGaAs. Intense photoluminescenc...
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